SiCrystal GmbH and ROM Investigate Feeding Process Waste Heat into the Municipal District Heating Network

Nuremberg, September 24, 2026 – SiCrystal GmbH, operator of one of Europe’s leading production facilities for silicon carbide (SiC) semiconductor substrates, has completed a comprehensive feasibility study on the use of industrial waste heat in collaboration with Rud. Otto Meyer Technik GmbH & Co. KG (ROM). The goal of the study, funded by the State Ministry of Economic Affairs, Regional Development, and Energy, was to evaluate the technical and economic feasibility of feeding previously unused process waste heat into the local district heating network.

The manufacturing process for silicon carbide semiconductor substrates generates significant amounts of heat at process temperatures exceeding 2,000 °C. This heat is currently dissipated via cooling circuits. The study now available shows that this energy source could be harnessed in the district heating network through the use of modern high-temperature heat pumps.

The study concludes that feeding thermal power into the network would be technically feasible and could be economically viable under ideal conditions. The heat supplied could make a valuable contribution to the regional heat supply and to the decarbonization of local infrastructure.

The project confirmed the technical potential for utilizing process waste heat based on existing production lines and provided valuable insights for future initiatives. SiCrystal is currently transforming its production lines, therefore the utilization of process waste heat will be reassessed once this work is complete. Regardless, the study underscores the fundamental potential for cross-sector collaboration between industry and municipal heat supply.

SiCrystal GmbH will continue to explore opportunities to further optimize energy use in its production processes and thereby contribute to sustainable industrial value creation.