Crystallographic, Physical and Electronic Properties of SiC*
Property | 4H-SiC | 6H-SiC |
Lattice Parameters | a = 0.3076 nm c = 1.0053 nm |
a = 0.3073 nm c = 1.5117 nm |
Stacking Sequence | 1 hexagonal (h) 1 cubic (k) |
1 hexagonal (h) 2 cubic (k1,k2) |
Mohs Hardness | ~9 | ~9 |
Density | 3.21*10+03 kg/m3 | 3.21*10+03 kg/m3 |
Dielectric Constant | 9.7 | 9.7 |
Thermal Expansion Coefficient | 4-5*10-06 /K | 4-5*10-06 /K |
Refractive Index (for lambda = 467 nm) |
no = 2.719 ne = 2.777 |
no = 2.707 ne = 2.755 |
Thermal Conductivity | 370 W/mK | 490 W/mK |
Bandgap | 3.27 eV | 3.02 eV |
Break-Down Electrical Field | 2 - 4 *10+08 V/m | 2 - 4 *10+08 V/m |
Saturation Drift Velocity | 2.0*10+05 m/s | 2.0*10+05 m/s |
* data as reported e.g. in Landolt-Boernstein (Springer Verlag) and G.L. Harris (INSPEC).